Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential
نویسندگان
چکیده
منابع مشابه
Electron mobility in double gate silicon on insulator transistors: Symmetric-gate versus asymmetric-gate configuration
We have studied electron mobility behavior in asymmetric double-gate silicon on insulator ~DGSOI! inversion layers, and compared it to the mobility in symmetric double-gate silicon on insulator devices, where volume inversion has previously been shown to play a very important role, being responsible for the enhancement of the electron mobility. Poisson’s and Schroedinger’s equations have been s...
متن کاملA comprehensive study of velocity overshoot effects in double gate silicon on insulator transistors
A comprehensive study of velocity overshoot in double gate silicon on insulator (DGSOI) transistors has been undertaken. Monte Carlo simulations were performed to clarify the dependence of velocity overshoot effects on the low field mobility, channel inversion charge and silicon layer thickness. The relationships and dependences between the energyand momentum-relaxation times were also investig...
متن کاملGate bias symmetry dependency of electron mobility and prospect of velocity modulation in double-gate silicon-on-insulator transistors
We report on detailed room-temperature transport properties of a 17 nm thick double-gate silicon-on-insulator (DGSOI) transistor. We find that when the electron gas is transferred between the top and the bottom of the silicon-on-insulator (SOI) layer by changing the gate bias symmetry (i.e., applying the gate biases in a push–pull fashion), while keeping the carrier density constant the maximum...
متن کاملBias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors
We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene fieldeffect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare th...
متن کاملVertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around
Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. In particular, nanowires' suitability for forming a gate-all-around (GAA) configuration confers to the device an optimum electrostatic control of the gate over the conduction cha...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2005
ISSN: 0021-4922,1347-4065
DOI: 10.1143/jjap.44.6508